Shinya Soeda
Renesas Electronics
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Featured researches published by Shinya Soeda.
international solid state circuits conference | 2005
Hideyuki Noda; Kazunari Inoue; Masayuki Kuroiwa; Futoshi Igaue; Kouji Yamamoto; Hans Jürgen Mattausch; Tetsushi Koide; Atsushi Amo; Atsushi Hachisuka; Shinya Soeda; Isamu Hayashi; Fukashi Morishita; Katsumi Dosaka; Kazutami Arimoto; Kazuyasu Fujishima; Kenji Anami; Tsutomu Yoshihara
This paper describes a 4.5-Mb dynamic ternary CAM (DTCAM) which is suitable for networking applications. A dynamic TCAM cell structure in 130-nm embedded DRAM technology is used to realize the small cell size of 3.59 /spl mu/m/sup 2/. In addition, a novel array architecture of TCAM, the pipelined hierarchical searching (PHS) architecture, is proposed. The PHS architecture is found to be suitable for realizing small area penalty, high-throughput searching and low-voltage operation simultaneously. With the combination of the DTCAM cell and the PHS architecture, small silicon area of 32 mm/sup 2/ for a fabricated 4.5-Mb DTCAM chip, high performance of 143 M searches per second and low power dissipation of 1.1 W have been achieved. To improve the yield of TCAMs, a novel shift redundancy technique is applied and estimated to result in 3.6-times yield improvement. These techniques and architectures described in this report are attractive for realizing cost-efficient, large-scale, high-performance TCAM chips.
international solid-state circuits conference | 2004
Hideyuki Noda; Kazunari Inoue; Masayuki Kuroiwa; Atsushi Amo; Atsushi Hachisuka; Hans Jürgen Mattausch; Tetsushi Koide; Shinya Soeda; Katsumi Dosaka; K. Arinnoto
A 4.5 Mb dynamic ternary CAM (DTCAM) is designed in 0.13 /spl mu/m embedded DRAM technology. A performance of 143 M searches/sec is achieved at a power dissipation of 1.1 W and on a small silicon area of 32 mm/sup 2/. A 3.6-times yield improvement is estimated by employing pipelined hierarchical searching and row/column-shift redundancy.
international solid-state circuits conference | 2000
Akira Yamazaki; Takeshi Fujino; Kazunari Inoue; Isamu Hayashi; Hideyuki Noda; Naoya Watanabe; Fukashi Morishita; J. Ootani; M. Kobayashi; Katsumi Dosaka; Yoshikazu Morooka; H. Shimano; Shinya Soeda; Atsushi Hachisuka; Y. Okumura; Kazutami Arimoto; S. Wake; Hideyuki Ozaki
Advanced 3D graphics (3DG) technology will be used in console game machines, and it is desired to develop a rendering controller chip which can handle real time 3D animation with true colors. Embedded DRAM (eDRAM) technology attracts attention of the 3DG systems, because only eDRAM can satisfy the required data rate. Four or more pipelines, 200 MHz pipeline operating frequency, and 64 b per pixel are required. With this configuration, the required data rate is 39.4 GB/s, assuming the total penalty of 35% for page miss and video refresh. Furthermore, a 120 Mb frame buffer is required for a 1280/spl times/1024-pixels screen. This 0.18 /spl mu/m 32 Mb eDRAM macro satisfies these requirements.
Archive | 2000
Hiroyasu Nohsoh; Hiroki Shinkawata; Shinya Soeda
Archive | 2001
Hiroyasu Nohsoh; Shinya Soeda
Archive | 2001
Hiroyasu Nohsoh; Shinya Soeda
Archive | 2004
Hideyuki Noda; Kazunari Inoue; Masayuki Kuroiwa; Atsushi Amo; Atsushi Hachisuka; Hans Jürgen Mattausch; Tetsushi Koide; Shinya Soeda; Katsumi Dosaka; Kazutami Arimoto
IEICE Transactions on Electronics | 2002
Akira Yamazaki; Takeshi Fujino; Kazunari Inoue; Isamu Hayashi; Hideyuki Noda; Naoya Watanabe; Fukashi Morishita; Katsumi Dosaka; Yoshikazu Morooka; Shinya Soeda; Kazutami Arimoto; Setsuo Wake; Kazuyasu Fujishima; Hideyuki Ozaki
Archive | 1996
Koichiro Narimatsu; Shigenori Yamashita; Nobuyuki Yoshioka; Shinya Soeda; Atsushi Hachisuka; Kouji Taniguchi; Yuki Miyamoto; Takayuki Saito; Ayumi Minamide
Archive | 1996
Koichiro Narimatsu; Shigenori Yamashita; Nobuyuki Yoshioka; Shinya Soeda; Atsushi Hachisuka; Kouji Taniguchi; Yuki Miyamoto; Takayuki Saito; Ayumi Minamide