Toni D. Van Gompel

Method for forming a stressor structure

STI stressor integration for minimal phosphoric exposure and divot-free topography

Electronic device including a trench field isolation region and a process for forming the same

Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer

Shallow trench isolation for SOI structures combining sidewall spacer and bottom liner

Process of forming an electronic device including a layer formed using an inductively coupled plasma

Process of forming an electronic device including a semiconductor layer and another layer adjacent to an opening within the semiconductor layer

Method and apparatus for elimination of excessive field oxide recess for thin Si SOI

Method for elimination of excessive field oxide recess for thin Si SOI

Method of forming trench isolation in a semiconductor device