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Uwe Schilling

Infineon Technologies

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Publication

Featured researches published by Uwe Schilling.

2011 Semiconductor Conference Dresden | 2011

Implementation of early monitor by advanced ebeam metrology for charging damage failure mechanism

Matthias Richter; Daniel Buttner; Uwe Schilling; Thomas Heinelt; Thomas Worbs; Thomas Kraiss; Westhausler Erik; Soh Yu Seng; Siew Kion Chan; Hee Shing Chua; Keng Chye Yeo; Patric Koh; Stephanie Kok Hiang; Tang

Based on failure analysis data the estimated failure mechanism in capacitor like device structures was created on wafer in Front End of Line. In the study the optimal process step for electron beam inspection (EBI) on Hermes Microvision eScanlite system was identified within various process steps. Finally an electron beam inspection monitor for early warning was established specifically to identify this fail mechanism with ADC (Automated Defect Classification) and statistical process control.

Archive | 2003

Method for producing a cavity in a monocrystalline silicon substrate and a semiconductor component having a cavity in a monocrystalline silicon substrate with an epitaxial covering layer

Martin Popp; Dietmar Temmler; Kristin Schupke; Uwe Schilling; Kerstin Pomplun

Archive | 2003

Fabrication process for a semiconductor component

Uwe Schilling

Archive | 2002

Semiconductor component and corresponding fabrication process

Uwe Schilling

Archive | 2003

Method for producing an antifuse and antifuse for the selective electrical connection of adjacent conductive regions

Matthias Lehr; Uwe Schilling; Veronika Polei; Irene Sperl

Archive | 2001

Method for producing an antifuse and antifuse for allowing selective electrical connection of neighbouring conductive zones

Matthias Lehr; Uwe Schilling; Veronika Polei; Irene Sperl

Archive | 2003

Method for forming a cavity in a monocrystalline silicon substrate and semiconductor device with a cavity in a monocrystalline silicon substrate with an epitaxial cover layer

Kerstin Pomplun; Martin Popp; Uwe Schilling; Kristin Schupke; Dietmar Temmler

Archive | 2002

A method for manufacturing a cavity in a monocrystalline silicon substrate and semiconductor device having a cavity in a monocrystalline silicon substrate with an epitaxial cap layer

Martin Popp; Dietmar Temmler; Kristin Schupke; Uwe Schilling

Archive | 2000

Deposition of various base layers for selective layer growth in semiconductor production

Markus Kirchhoff; Hans-Peter Sperlich; Uwe Schilling; Zvonimir Gabric; Oswald Spindler; Stephan Wege; Hans Glawischnig

Archive | 2000

Verfahren zur Herstellung einer Antifuse, Antifuse zur selektiven elektrischen Verbindung von benachbarten leitenden Bereichen und integrierte Schaltung mit einer Antifuse A process for producing an antifuse, an antifuse for the selective electrical connection of adjacent conductive regions and integrated circuit having an antifuse

Matthias Lehr; Veronika Polei; Irene Sperl; Uwe Schilling

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Collaboration

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Dietmar Temmler

Infineon Technologies

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Hans Glawischnig

Infineon Technologies

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Hans-Peter Sperlich

Infineon Technologies

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Irene Sperl

Infineon Technologies

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Kristin Schupke

Infineon Technologies

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Markus Kirchhoff

Infineon Technologies

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Martin Popp

Infineon Technologies

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Matthias Lehr

Infineon Technologies

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Oswald Spindler

Infineon Technologies

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Stephan Wege

Infineon Technologies

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