Wen-Han Wang
Industrial Technology Research Institute
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Publication
Featured researches published by Wen-Han Wang.
international symposium on vlsi technology, systems, and applications | 2007
Der-Sheng Chao; Hong-Hui Hsu; Ming-Jung Chen; Yi-Chan Chen; Fred Chen; Chain-Ming Lee; Philip H. Yen; Chih-Wei Chen; Wen-Han Wang; Wei-Su Chen; Chenhsin Lien; Ming-Jer Kao; Ming-Jinn Tsai
A novel PCM cell with double GST thermally confined structure was proposed and fabricated in this work. by inserting an extra bottom GST layer under the confined GST region, the heat loss can be effectively prevented and the temperature profile over active region becomes more uniform. thus, a low reset current less than 0.3 ma can be achieved and the set performance is also improved to be faster than 200 ns.
international symposium on vlsi technology, systems, and applications | 2007
Chain-Ming Lee; Der-Sheng Chao; Yi-Chan Chen; Ming-Jung Chen; Philip H. Yen; Chih-Wei Chen; Hong-Hui Hsu; Wen-Han Wang; Wei-Su Chen; Fred Chen; Tsai-Chu Hsiao; Ming-Jer Kao; Ming-Jinn Tsai
In this paper, a new application of phase change material GeSnSbTe (GSST) is proposed for high-speed phase-change memory (PCM). The device characteristics of PCM employing GeSnSbTe and conventional Ge2Sb2Te5 (GST) are compared. Because of high crystallization speed, the GSST device demonstrates the benefits of shorter SET pulse, lower SET current, and higher resistance ratio.
non-volatile memory technology symposium | 2006
Jyi-Tyan Yeh; Fred Chen; Der-Sheng Chao; Wen-Han Wang; Yi-Chan Chen; Chain-Ming Lee; Ming-Jinn Tsai; Ming-Jer Kao
A simulation procedure using the conventional thermal-electric finite element method for the phase change memory has been developed. By introducing a defect on the amorphous chalcogenide of a reset phase change memory, the snapback by hot filament due to thermal runaway has been investigated by the numerical simulations with three-dimensional model.
international symposium on vlsi technology, systems, and applications | 2006
Wen-Han Wang; Der-Sheng Chao; Y. C. Chen; Chain-Ming Lee; Hong-Hui Hsu; Y. Chuo; M. H. Tseng; M. H. Lee; Wei-Su Chen; Ming-Jer Kao; Ming-Jinn Tsai
Novel interfacial layer structure was proposed with adjustable resistance ratio and more uniform data distribution capabilities. The reduction of writing power can also be expected with further optimizing the materials and corresponding thicknesses. The performance will be even better with the shrinking of contact area
international symposium on vlsi design, automation and test | 2007
Shyh-Shyuan Sheu; Wen-Han Wang; Pei-Chia Chiang; Keng-Li Su; Ming-Jer Kao; Ming-Jinn Tsai
A 4-Mb with SPI serial interface phase-change memory which is completely compatible with the traditional SPI flash memory is implemented in this study. The peripheral circuit is much simpler than flash memory. The 512 Kb sector erase time is less than 7 ms while the 4 Mb bulk erase time is 80 ms only.
Archive | 2007
Shyh-Shyuan Sheu; Pei-Chia Chiang; Wen-Han Wang
Archive | 2006
Te-Sheng Chao; Wen-Han Wang; Min-Hung Lee; Hong-Hui Hsu; Chien-Min Lee; Yen Chuo; Yi-Chan Chen; Wei-Su Chen
Archive | 2006
Yi-Chan Chen; Hong-Hui Hsu; Chien-Min Lee; Yen Chuo; Te-Sheng Chao; Wen-Han Wang; Wei-Su Chen; Min-Hung Lee
Archive | 2007
Pei-Chia Chiang; Shyh-Shyuan Sheu; Wen-Han Wang; 烈萩 林; 培嘉 江; 文翰 王; 世玄 許
non-volatile memory technology symposium | 2007
Fred Chen; Der-Sheng Chao; M.-J. Chen; P. Yen; Jyi-Tyan Yeh; Chain-Ming Lee; Wen-Han Wang; Ming-Jer Kao; Ming-Jinn Tsai
Collaboration
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