Bruno Geoffrion

Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone

Method and apparatus for controlling gas flow to a processing chamber

Method for high aspect ratio HDP CVD gapfill

Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content

Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation

Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones

Plasma etch process using polymerizing etch gases and an inert diluent gas in independent gas injection zones to improve etch profile or etch rate uniformity

Gas distribution system for improved transient phase deposition

System and method to divide fluid flow in a predetermined ratio

Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications