Douglas B. Hershberger

A 0.24 /spl mu/m SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz f/sub t/ HBT and 0.18 /spl mu/m L/sub ett/ CMOS

A new base-after-gate integration scheme has been developed to integrate a 47 GHz f/sub t/, 65 GHz F/sub max/SiGe HBT process with a 0.24 /spl mu/m CMOS technology having 0.18 /spl mu/m L/sub eff/ and 5 nm gate oxide. We discuss the benefits and challenges of this integration scheme which decouples the HBT from the CMOS thermal cycles. We also describe the resulting 0.24 /spl mu/m SiGe BiCMOS technology, BiCMOS 6HP, which includes a 7 nm dual gate oxide option and full suite of passive components. The technology provides a high level of integration for mixed-signal RF applications.

High performance, low complexity 0.18 /spl mu/m SiGe BiCMOS technology for wireless circuit applications

High frequency performance at low current density and low wafer cost is essential for low power wireless BiCMOS technologies. We have developed a low-complexity, ASIC-compatible, 0.18 /spl mu/m SiGe BiCMOS technology for wireless applications that offers 3 different breakdown voltage NPNs; with the high performance device achieving F/sub t//F/sub max/ of 60/85 GHz with a 3.0 V BV/sub CEO/. In addition, a full suite of high performance passive devices complement the state-of-the-art SiGe wireless HBTs.

A cost-competitive high performance Junction-FET (JFET) in CMOS process for RF & analog applications

in this paper, we present a cost-effective JFET integrated in 0.18µm RFCMOS process. The design is highly compatible with standard CMOS process, therefore can be easily scaled and implemented in advanced technology nodes. The design impact on Ron and Voff is further discussed, providing the insights and guidelines for JFET optimization. Besides the superior flicker noise (1/f noise) characteristics, this JFET device also demonstrates promising RF characteristics such as maximum frequency, linearity, power handling capability, power-added efficiency, indicating a good candidate for RF designs.

A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, f T /f MAX of 15/14 GHz VPNP, and f T /f MAX of 60/125 GHz HBT

For the first time, we report a 0.24 mum SiGe BiCMOS technology that offers full suite of active device including three distinct NPNs, a vertical PNP, CMOS supporting three different operating-voltages, and wide range of passive devices. In particular, this technology provides 6.5 V CMOS capability and VPNP with fT/fMAX of 15/14 GHz and BVCEO of 6.5 V which can be used to complement high breakdown NPN with fT of 30 GHz and BVceo of 6.0 V.