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Dive into the research topics where Evgeni Gousev is active.

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Featured researches published by Evgeni Gousev.


Applied Physics Letters | 2002

Thermal stability of polycrystalline silicon/metal oxide interfaces

A. Callegari; Evgeni Gousev; Theodore H. Zabel; Dianne L. Lacey; Michael A. Gribelyuk; P. Jamison

The thermal stability of polycrystalline silicon (poly-Si)/ZrO2 interface was significantly enhanced when the poly-Si was plasma deposited using silane heavily diluted in He. With regard to this process, transmission electron microscopy shows a sharp poly-Si/ZrO2 interface that is stable at 1000u200a°C. When the poly-Si was deposited by chemical vapor deposition using undiluted silane gas, transmission electron microscopy shows strong reactions at the poly-Si/ZrO2 interface when annealed at 1000u200a°C. The increased stability can be attributed to He dilution, which may prevent hydrogen from reducing the metal oxide. Another explanation may be directly related to He-excited plasma, which is known to produce denser and more stable films.


Archive | 2000

Interfacial oxidation process for high-k gate dielectric process integration

Arne W. Ballantine; D. A. Buchanan; E. Cartier; Kevin K. Chan; M. Copel; C. D'Emic; Evgeni Gousev; F. R. McFeely; J. Newbury; Harald F. Okorn-Schmidt; Patrick R. Varekamp; Theodore H. Zabel


Archive | 2004

Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics

Nestor A. Bojarczuk; Cyril Cabral; E. Cartier; M. Copel; Martin M. Frank; Evgeni Gousev; Supratik Guha; Rajarao Jammy; Vijay Narayanan; Vamsi Paruchuri


Archive | 2000

Methods for forming metal oxide layers with enhanced purity

Alessandro Callegari; Fuad E. Doany; Evgeni Gousev; Theodore H. Zabel


Archive | 2005

Process options of forming silicided metal gates for advanced CMOS devices

Ricky S. Amos; D. A. Buchanan; Cyril Cabral; Evgeni Gousev; Victor Ku; A. Steegen


Archive | 2003

High-dielectric constant insulators for feol capacitors

Arne W. Ballantine; D. A. Buchanan; E. Cartier; Douglas D. Coolbaugh; Evgeni Gousev; Harald F. Okorn-Schmidt


Archive | 2001

Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier

Nestor A. Bojarczuk; Kevin K. Chan; C. D'Emic; Evgeni Gousev; Supratik Guha; P. Jamison; Lars-Ake Ragnarsson


Archive | 2004

Semiconductor-dielectric-semiconductor device structure fabricated by wafer bonding

Martin M. Frank; Evgeni Gousev; E. Cartier


Archive | 2005

Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide

Nestor A. Bojarczuk; Cyril Cabral; E. Cartier; Martin M. Frank; Evgeni Gousev; Supratik Guha; P. Jamison; Rajarao Jammy; Vijay Narayanan; Vamsi Paruchuri


Archive | 2008

Method of forming metal/high-k gate stacks with high mobility

Wanda Andreoni; Alessandro Callegari; E. Cartier; Alessandro Curioni; C. D'Emic; Evgeni Gousev; Michael A. Gribelyuk; P. Jamison; Rajarao Jammy; Dianne L. Lacey; F. R. McFeely; Vijay Narayanan; Carlo A. Pignedoli; Joseph F. Shepard; Sufi Zafar

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