Frederick G. Anderson

An integrated silicon photonics technology for O-band datacom

A manufacturable platform of CMOS, RF and opto-electronic devices fully PDK enabled to demonstrate a 4×25 Gb/s reference design is presented. With self-aligned fiber attach, this technology enables low-cost O-band data-com transceivers. In addition, this technology can offer enhanced performance and yield in hybrid-assembly for applications at 25 Gbaud and beyond.

CMOS Integrated Ge detectors

Methods for integrating germanium detectors within CMOS processes to form high performance integrated monolithic receivers will be reviewed. Focus will be on achieving fiber-coupled input sensitivity that meets or exceeds traditional ROSA approaches.

Large signal substrate modeling in RF SOI technologies

This paper describes a large signal Silicon on Insulator (SOI) substrate modeling methodology for high power circuit applications such as RF Switches. It is shown that the use of a varactor in place of a linear capacitor representing the buried oxide (BOX) improves the harmonic predictions of the circuit. The new substrate model is validated against 2nd and 3rd harmonics of an RF SOI switch operating at 890 MHz.