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Gert Burbach

GlobalFoundries

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Featured researches published by Gert Burbach.

custom integrated circuits conference | 2013

SRAM read current variability and its dependence on transistor statistics

Sriramkumar Venugopalan; Vivek Joshi; Luis Zamudio; Matthias Goldbach; Gert Burbach; Ralf van Bentum; Sriram Balasubramanian

Our study breaks down the dependence of SRAM read current (I<sub>read</sub>) variability (σI<sub>read</sub>) into constituting pass-gate (PG) and pull down (PD) NMOS transistor variability. We report a bottoms-up model for σI<sub>read</sub> including feedback in stacked transistors and discuss its implications on SRAM performance.

Archive | 2006

A SEMICONDUCTOR DEVICE HAVING STRESSED ETCH STOP LAYERS OF DIFFERENT INTRINSIC STRESS IN COMBINATION WITH PN JUNCTIONS OF DIFFERENT DESIGN IN DIFFERENT DEVICE REGIONS

Joe Bloomquist; Peter Javorka; Manfred Horstmann; Gert Burbach

Archive | 2003

Trench isolation structure for a semiconductor device with a different degree of corner rounding and a method of manufacturing the same

Ralf van Bentum; Stephan Kruegel; Gert Burbach

Archive | 2005

Technique for evaluating local electrical characteristics in semiconductor devices

Frank Wirbeleit; Gert Burbach; Karsten Wieczorek; Manfred Horstmann

Archive | 2004

Verfahren zum Ausbilden einer Halbleiterstruktur, die Transistorelemente mit unterschiedlich verspannten Kanalgebieten umfasst

Gert Burbach; Manfred Horstmann; Rolf Stephan; Karsten Wieczorek

Archive | 2002

Halbleiterelement mit einem Feldeffekttransistor und einem passiven Kondensator mit reduziertem Leckstrom und einer verbesserten Kapazität pro Einheitsfläche und Verfahren zu dessen Herstellung

Gert Burbach; Thomas Feudel; Karsten Wieczorek

Archive | 2008

Temperaturüberwachung in einem Halbleiterbauelement unter Anwendung eines pn-Übergangs auf der Grundlage von Silizium/Germaniummaterial Temperature control in a semiconductor device using a pn junction on the basis of silicon / germanium material

Gert Burbach; Markus Forsberg; Anthony Buda Mowry; Rolf Stephan

Archive | 2006

Halbleiterbauelement mit verspannten Ätzstoppschichten mit unterschiedlicher intrinsischer Verspannung in Verbindung mit PN-Übergängen unterschiedlicher Gestaltung in unterschiedlichen Bauteilgebieten

Joe Bloomquist; Gert Burbach; Manfred Horstmann; Peter Javorka

Archive | 2006

Verfahren zur Herstellung eines verspannten Transistors durch eine späte Amorphisierung und durch zu entfernende Abstandshalter A method for producing a strained transistor by a late and amorphization to be removed by spacers

Jan Hoentschel; Andy Wei; Gert Burbach; Peter Javorka

Archive | 2006

Halbleiterbauelement mit unterschiedlich verspannten Ätzstoppschichten in Verbindung mit PN-Übergängen unterschiedlicher Gestaltung in unterschiedlichen Bauteilgebieten und Verfahren zur Herstellung des Halbleiterbauelements A semiconductor device with strained different etch stop layers in conjunction with PN junctions of various design in different device regions and method of manufacturing the semiconductor device

Joe Bloomquist; Peter Javorka; Manfred Horstmann; Gert Burbach

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Manfred Horstmann

GlobalFoundries

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Karsten Wieczorek

Advanced Micro Devices

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Rolf Stephan

Advanced Micro Devices

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Thomas Feudel

Advanced Micro Devices

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Ralf van Bentum

GlobalFoundries

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Peter Javorka

Advanced Micro Devices

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Stephan Kruegel

Advanced Micro Devices

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Frank Wirbeleit

Advanced Micro Devices

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Joe Bloomquist

Advanced Micro Devices

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Markus Forsberg

Advanced Micro Devices

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