Shen-Iuan Liu

A Broadband Noise-Canceling CMOS LNA for 3.1–10.6-GHz UWB Receivers

An ultra-wideband 3.1-10.6-GHz low-noise amplifier employing a broadband noise-canceling technique is presented. By using the proposed circuit and design methodology, the noise from the matching device is greatly suppressed over the desired UWB band, while the noise from other devices performing noise cancellation is minimized by the systematic approach. Fabricated in a 0.18-mum CMOS process, the IC prototype achieves a power gain of 9.7 dB over a -3 dB bandwidth of 1.2-11.9-GHz and a noise figure of 4.5-5.1 dB in the entire UWB band. It consumes 20 mW from a 1.8-V supply and occupies an area of only 0.59 mm2

A wide-range delay-locked loop with a fixed latency of one clock cycle

A delay-locked loop (DLL) with wide-range operation and fixed latency of one clock cycle is proposed. This DLL uses a phase selection circuit and a start-controlled circuit to enlarge the operating frequency range and eliminate harmonic locking problems. Theoretically, the operating frequency range of the DLL can be from 1/(N/spl times/T/sub Dmax/) to 1/(3T/sub Dmin/), where T/sub Dmin/ and T/sub Dmax/ are the minimum and maximum delay of a delay cell, respectively, and N is the number of delay cells used in the delay line. Fabricated in a 0.35 /spl mu/m single-poly triple-metal CMOS process, the measurement results show that the proposed DLL can operate from 6 to 130 MHz, and the total delay time between input and output of this DLL is just one clock cycle. From the entire operating frequency range, the maximum rms jitter does not exceed 25 ps. The DLL occupies an active area of 880 /spl mu/m/spl times/515 /spl mu/m and consumes a maximum power of 132 mW at 130 MHz.

Miniature 3-D inductors in standard CMOS process

The structure of a miniature three-dimensional (3-D) inductor is presented in this paper. The proposed miniature 3-D inductors have been fabricated in a standard digital 0.35-/spl mu/m one-poly-four-metal (1P4M) CMOS process. According to the measurement results, the self-resonance frequency f/sub SR/ of the proposed miniature 3-D inductor is 34% higher than the conventional stacked inductor. Moreover, the inductor occupies only 16% of the area of the conventional planar spiral inductor with the same inductance and maximum quality factor Q/sub max/. A 2.4-GHz CMOS low-noise amplifier (LNA), which utilized the proposed miniature 3-D inductors, has also been fabricated. By virtue of the small area of the inductor, the size and cost of the radio frequency (RF) chip can be significantly reduced.

A broadband noise-canceling CMOS LNA for 3.1-10.6-GHz UWB receiver

An ultra-wideband (UWB) noise-canceling low-noise amplifier (LNA) is presented. By using inductive series and shunt peaking techniques, the effective bandwidth of noise canceling is extended. This LNA has been fabricated in a 0.18/spl mu/m CMOS process. The measured noise figure is 4.5-5.1dB over 3.1-10.6-GHz, while the power gain is 9.7dB with a -3-dB bandwidth of 1.2-11.9-GHz. It consumes 20mW from a 1.8V supply and occupies only 0.59mm/sup 2/.

An Ultra-Wide-Band 0.4–10-GHz LNA in 0.18-

A two-stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. With the common-gate configuration employed as the input stage, the broad-band input matching is obtained and the noise does not rise rapidly at higher frequency. By combining the common-gate and common-source stages, the broad-band characteristic and small area are achieved by using two inductors. This LNA has been fabricated in a 0.18-mum CMOS process. The measured power gain is 11.2-12.4 dB and noise figure is 4.4-6.5 dB with -3-dB bandwidth of 0.4-10 GHz. The measured IIP3 is -6 dBm at 6 GHz. It consumes 12 mW from a 1.8-V supply voltage and occupies only 0.42 mm2

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This work presents the technique of multiple inductive-series peaking to mitigate the deteriorated parasitic capacitance in CMOS technology. Employing multiple inductive-series peaking technique, a 10-Gb/s optical transimpedance amplifier (TIA) has been implemented in a 0.18-/spl mu/m CMOS process. The 10-Gb/s optical CMOS TIA, which accommodates a PD capacitor of 250 fF, achieves the gain of 61 dB/spl Omega/ and 3-dB frequency of 7.2 GHz. The noise measurement shows the average noise current of 8.2 pA//spl radic/Hz with power consumption of 70 mW.

m CMOS

A phase-locked loop (PLL) with a fast-locked discriminator-aided phase detector (DAPD) is presented. Compared with the conventional phase detector (PD), the proposed fast-locked PD reduces the PLL pull-in time and enhances the switching speed, while maintaining better noise bandwidth. The synthesizer has been implemented in a 0.35-/spl mu/m CMOS process, and the output phase noise is -99 dBc/Hz at 100-kHz offset. Under the supply voltage of 3.3 V, its power consumption is 120 mW.

CMOS wideband amplifiers using multiple inductive-series peaking technique

A wide-range all-digital delay-locked loop (ADDLL) is presented to achieve low jitter, low power and process immunity. The variable successive approximation register-controlled algorithm is proposed to eliminate the harmonic-locking issue in wide-range operation. It can also achieve the fast-locking property and closed-loop operation. With the balanced edge combiner, the ADDLL outputs a synchronous clock with the duty cycle close to 50% when the duty cycle of the input clock varies from 20% to 80%. Fabricated in 0.18mum CMOS technology, the ADDLL maintains a fixed one input clock cycle latency from 40MHz to 550MHz without the harmonic-locking issue. It dissipates 12.6mW from a 1.8V supply at 550 MHz. The measured root-mean-square and peak-to-peak jitters at 550MHz are 1.5ps and 12ps, respectively

Fast-switching frequency synthesizer with a discriminator-aided phase detector

In this paper, a spread-spectrum clock generator (SSCG) with triangular modulation is presented. Only a divider and a programmable charge pump are added into a conventional clock generator to accomplish the spread-spectrum function. The proposed circuit has been fabricated in a 0.35-/spl mu/m CMOS single-poly quadruple-metal process. The proposed SSCG can generate clocks of 66, 133, and 266 MHz with center spread ratios of 0.5%, 1%, 1.5%, 2%, and 2.5%. Experimental results confirm the theoretical analyses.

A 40–550 MHz Harmonic-Free All-Digital Delay-Locked Loop Using a Variable SAR Algorithm

A successive approximation register-controlled delay-locked loop (SARDLL) has been fabricated in a 0.25-/spl mu/m standard n-well DPTM CMOS process to realize a fast-lock clock-deskew buffer for long distance clock distribution. This DLL adopts a binary search method to shorten lock time while maintaining tight synchronization between input and output clocks. The measured lock time of the proposed SARDLL is within 30 clock cycles at 100-MWz clock input. The power dissipation is 3.3 mW (not including off-chip drivers) at a 1.1-V supply voltage while the measured rms and peak-to-peak jitter are 11.3 ps and 95 /spl mu/s, respectively.