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Dive into the research topics where David Eric Tremouilles is active.

Publication


Featured researches published by David Eric Tremouilles.


electrical overstress/electrostatic discharge symposium | 2005

Transient voltage overshoot in TLP testing — Real or artifact?

David Eric Tremouilles; Steven Thijs; Philippe Roussel; M.I. Natarajan; Vesselin Vassilev; Guido Groeseneken

This paper investigates on the transient pulse response of the device under test, which is becoming a critical aspect in determining the ESD reliability of a variety of technology products. For the first time, the feasibility to calibrate or tune the artifacts arising out of system parasitic to `see the device transient response is presented in this paper with experimental data and numerical analysis.


electrical overstress electrostatic discharge symposium | 2007

T-diodes - a novel plug-and-play wideband RF circuit ESD protection methodology

Dimitri Linten; Steven Thijs; Jonathan Borremans; M. Dehan; David Eric Tremouilles; Mirko Scholz; M.I. Natarajan; Piet Wambacq; Guido Groeseneken

A novel plug-and-play ESD protection methodology for wideband RF applications is demonstrated. This methodology utilizes an integrated transformer together with classical ESD protection elements. As a demonstrator, a wideband RF LNA in 0.18 mum CMOS is protected above 4.5 kV HBM without degrading its bandwidth.


international conference on ic design and technology | 2010

Advanced ESD power clamp design for SOI FinFET CMOS technology

Steven Thijs; David Eric Tremouilles; Dimitri Linten; Natarajan Mahadeva Iyer; Alessio Griffoni; Guido Groeseneken

Two novel ESD power clamp design techniques for SOI FinFET CMOS technology are reported. First, a layout improvement technique is discussed for stacked gated diodes, which reduces the required area for a given ESD robustness and at the same time reduces the on-resistance of the clamp. Secondly, circuit design techniques are used to convert a standard RC-triggered active ESD clamp into a bi-directional design, thereby alleviating the need for a separate reverse protection diode. The concepts can be applied for planar SOI as well.


electrical overstress electrostatic discharge symposium | 2007

Characterization and modeling of diodes in Sub-45 nm CMOS technologies under HBM stress conditions

Dimitri Linten; S. Thrjs; Mirko Scholz; David Eric Tremouilles; Masanori Sawada; T. Nakaei; T. Hasebe; Guido Groeseneken

Diodes in a sub-45 nm CMOS technology, bulk and FinFET, are both investigated for their behavior under real-time ESD conditions. A new compact ESD diode model is developed and validated for HBM ESD transients. Forward recovery behavior during both TLP and HBM ESD stress is observed for FinFET diodes.


international symposium on the physical and failure analysis of integrated circuits | 2007

ESD protection for sub-45 nm MugFET technology

M.I. Natarajan; Steven Thijs; David Eric Tremouilles; Dimitri Linten; Nadine Collaert; Malgorzata Jurczak; Guido Groeseneken

From the design point of view, while such technology options may result in increased transistor performance, the ability to achieve sufficient product reliability is to be addressed. Among the industry accepted reliability requirements, electrostatic discharge (ESD) reliability assessment is the focus of this work.


Archive | 2009

Design methodology for MuGFET ESD protection devices

Steven Thijs; Dimitri Linten; David Eric Tremouilles


electrical overstress/electrostatic discharge symposium | 2006

Turn-off characteristics of the CMOS snapback ESD protection devices - new insights and its implications

Vladislav Vashchenko; Mirko Scholz; Ph. Jansen; R. Petersen; M.I. Natarajan; David Eric Tremouilles; M. Sawada; T. Nakaei; T. Hasebe; M. ter Beek; Guido Groeseneken


Archive | 2009

Fast Triggering ESD Protection Device and Method for Designing Same

Steven Thijs; David Eric Tremouilles


Archive | 2008

Method for calibrating an electrostatic discharge tester

Mirko Scholz; David Eric Tremouilles; Steven Thijs; Dimitri Linten


Archive | 2009

Bidirectional ESD Power Clamp

Dimitri Linten; Steven Thijs; David Eric Tremouilles; Natarajan Mahadeva Iyer

Collaboration


Dive into the David Eric Tremouilles's collaboration.

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Steven Thijs

Katholieke Universiteit Leuven

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Dimitri Linten

Katholieke Universiteit Leuven

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Guido Groeseneken

Katholieke Universiteit Leuven

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Mirko Scholz

Katholieke Universiteit Leuven

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M.I. Natarajan

Katholieke Universiteit Leuven

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Natarajan Mahadeva Iyer

Katholieke Universiteit Leuven

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T. Hasebe

Katholieke Universiteit Leuven

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Alessio Griffoni

Katholieke Universiteit Leuven

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Jonathan Borremans

Katholieke Universiteit Leuven

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M. Dehan

Katholieke Universiteit Leuven

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