David Eric Tremouilles
Katholieke Universiteit Leuven
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Publication
Featured researches published by David Eric Tremouilles.
electrical overstress/electrostatic discharge symposium | 2005
David Eric Tremouilles; Steven Thijs; Philippe Roussel; M.I. Natarajan; Vesselin Vassilev; Guido Groeseneken
This paper investigates on the transient pulse response of the device under test, which is becoming a critical aspect in determining the ESD reliability of a variety of technology products. For the first time, the feasibility to calibrate or tune the artifacts arising out of system parasitic to `see the device transient response is presented in this paper with experimental data and numerical analysis.
electrical overstress electrostatic discharge symposium | 2007
Dimitri Linten; Steven Thijs; Jonathan Borremans; M. Dehan; David Eric Tremouilles; Mirko Scholz; M.I. Natarajan; Piet Wambacq; Guido Groeseneken
A novel plug-and-play ESD protection methodology for wideband RF applications is demonstrated. This methodology utilizes an integrated transformer together with classical ESD protection elements. As a demonstrator, a wideband RF LNA in 0.18 mum CMOS is protected above 4.5 kV HBM without degrading its bandwidth.
international conference on ic design and technology | 2010
Steven Thijs; David Eric Tremouilles; Dimitri Linten; Natarajan Mahadeva Iyer; Alessio Griffoni; Guido Groeseneken
Two novel ESD power clamp design techniques for SOI FinFET CMOS technology are reported. First, a layout improvement technique is discussed for stacked gated diodes, which reduces the required area for a given ESD robustness and at the same time reduces the on-resistance of the clamp. Secondly, circuit design techniques are used to convert a standard RC-triggered active ESD clamp into a bi-directional design, thereby alleviating the need for a separate reverse protection diode. The concepts can be applied for planar SOI as well.
electrical overstress electrostatic discharge symposium | 2007
Dimitri Linten; S. Thrjs; Mirko Scholz; David Eric Tremouilles; Masanori Sawada; T. Nakaei; T. Hasebe; Guido Groeseneken
Diodes in a sub-45 nm CMOS technology, bulk and FinFET, are both investigated for their behavior under real-time ESD conditions. A new compact ESD diode model is developed and validated for HBM ESD transients. Forward recovery behavior during both TLP and HBM ESD stress is observed for FinFET diodes.
international symposium on the physical and failure analysis of integrated circuits | 2007
M.I. Natarajan; Steven Thijs; David Eric Tremouilles; Dimitri Linten; Nadine Collaert; Malgorzata Jurczak; Guido Groeseneken
From the design point of view, while such technology options may result in increased transistor performance, the ability to achieve sufficient product reliability is to be addressed. Among the industry accepted reliability requirements, electrostatic discharge (ESD) reliability assessment is the focus of this work.
Archive | 2009
Steven Thijs; Dimitri Linten; David Eric Tremouilles
electrical overstress/electrostatic discharge symposium | 2006
Vladislav Vashchenko; Mirko Scholz; Ph. Jansen; R. Petersen; M.I. Natarajan; David Eric Tremouilles; M. Sawada; T. Nakaei; T. Hasebe; M. ter Beek; Guido Groeseneken
Archive | 2009
Steven Thijs; David Eric Tremouilles
Archive | 2008
Mirko Scholz; David Eric Tremouilles; Steven Thijs; Dimitri Linten
Archive | 2009
Dimitri Linten; Steven Thijs; David Eric Tremouilles; Natarajan Mahadeva Iyer